A nanogapped hysteresis-free field-effect transistor

We propose a semi-suspended device structure and construct nanogapped, hysteresis-free field-effect transistors (FETs), based on the van der Waals stacking technique. The structure, which features channel above submicrometer-long wedge-like nanogap, is fulfilled by transferring ultraclean boron nitride-supported MoS 2 channels directly onto dielectric-spaced vertical source/drain stacks. Electronic characterization analyses reveal high overall quality, including interfaces, negligible electrical scanning hysteresis, Ohmic contacts in structures. unique hollow FET holds potential for exploiting reliable electronics as well nanofluid pressure sensors.